Abstract: SRAM single-event effects are studied in this paper by using heavy ion research facility in Lanzhou (HIRFL) at the Institute of Modern Physics, Chinese Academy of Sciences. Two kinds of SRAMs made in China were tested. The structure and the principle of two detection systems are described in detail. By analyzing the test results, the advantages and drawbacks of these two systems are compared. Related problems are discussed. The designs of SRAM single event effect detection systems can provide a guide for other electronic components’ single event effect detection systems.