光电耦合器高能质子位移辐射损伤效应评估

The evaluation of displacement effects of opto-coupler from high energy protons’ irradiation

摘要: 文章针对光电耦合器的空间辐射损伤效应，在国内首次开展了高能质子辐照对光电耦合器的位移损伤效应试验研究。结果表明：电流传输比是光电耦合器件位移损伤的敏感参数；相同质子等效注量辐照下，70 MeV能量的质子比191.17 MeV能量的质子对光电耦合器的损伤更严重；此外其他条件相同时，较大驱动电流下器件的位移损伤较小。文章还分析了引起光电耦合器件电流传输比退化的原因。

Abstract: The displacement damage effects on opto-couplers based on 191.17 MeV and 70 MeV protons’ irradiations are evaluated. The results show that the current transfer ratio(CTR) is more sensitive to the proton irradiation as compared to other parameters. The CTR’s degradation under the 70 MeV proton irradiation on the opto-couplers is more severe than that under the 191.17 MeV proton irradiation. The cause of the degradation of CTR is analyzed.