3DG111F等四种双极晶体管空间总剂量效应研究

The space total dose effects on bipolar junction transistors 3DG111F, 3DG162J, 3DG180C, and 3DK9H

摘要: 3DG111F等4种双极晶体管在航天器驱动电子设备中有着重要的应用。研究和掌握空间辐射环境对这些器件产生的总剂量效应有助于了解单机总剂量效应。文章对3DG111F等4种双极晶体管进行了总剂量辐照试验、测量及试验结果分析。研究结果可为单机总剂量效应的分析提供试验依据。

Abstract: Four types of bipolar junction transistors, namely 3DG111F, 3DG162J, 3DG180C, and 3DK9H, play an important role in spacecraft drive electronics. The total dose Ⅱ ABSTRACTS OF THE PRESENT ISSUE effect on these devices in the space radiation environment is discussed in this paper. The ionizing dose experiment on these bipolar junction transistors was carried out in order to provide a basis for the analysis of component total dose effect.