MOSFET单粒子烧毁引起的DC/DC电源变换器功能失效试验研究

Test study of function failure of DC/DC converter caused by single event burnout of power MOSFETs

摘要: 文章利用回旋加速器产生的Kr离子，对双路输出的DC/DC电源变换器开展了单粒子效应试验研究，分析了在空载和加载两种偏置条件下的试验结果，指出内部功率MOSFETs器件的漏-源端电压在单粒子辐照条件下超出了器件的击穿电压是导致DC/DC电源变换器单粒子功能失效的直接原因，最后给出了航天器电源系统抗辐射设计和功率MOSFETs器件选用建议。

Abstract: Single event effects on DC/DC converter are investigated under loaded and off-loaded bias based on Kr ion irradiation from accelerator. Results under two bias are analyzed. The voltage between drain and source of MOSFETs exceeds its own breakdown voltage during irradiation, which leads to the DC/DC converter function failure. The radiation hardness design of the power system based on DC/DC and inner MOSFETs choice is suggested.