90 keV电子辐照对Kapton H薄膜化学结构的影响

Effects of 90 keV proton irradiation on chemical structure of Kapton H film

  • 摘要: 文章研究了能量为90 keV的电子辐照对Kapton H薄膜化学结构的影响。XPS分析表明,低能电子辐照导致Kapton H薄膜分子结构中C—N和C—O键的断裂,以及C=O键的断裂和重组,并且有部分键断裂后交联。随着辐照剂量及辐照能量的增加,材料中的C—N、C=O键含量减少,形成表面碳富集。辐照使柔性结构C—O键被破坏,产生的交联及以苯环为主的三维立体网状结构使其表面硬度增加。

     

    Abstract: In this paper, the effects of 90 keV proton irradiation on chemical structure of Kapton H film are investigated. X-ray photoelectron spectroscopy (XPS) analysis results show that the low energy electron irradiation induces the break of C-N and C-O bands in Kapton H film molecular structure, the break of C=O bands and the recombination, while, some broken bands can cross the linkage again. The number of C-N and C=O bands decreases with increasing electron irradiation energy in Kapton H film molecular structure. The surface hardness of Kapton H film increases after irradiated by 90 keV protons due to the break of C-O bands as flexible structures, and the generation of cross linkage structures and three-dimensional reticulated structures with benzene ring as the main component.

     

/

返回文章
返回