Thermal design and verification of high heat flux microscale devices in active phased array of satellite
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摘要:
为解决卫星有源相控阵高热流微尺度器件散热和热试验验证难题，首先，提出T/R模块低温共烧陶瓷热设计优化方案，选择热通孔面积比为11.4%，并建立尺度比为800∶1的跨尺度热模型；其次，进行地面常压热平衡试验，利用红外热像仪测量器件温度；再基于热参数敏感性分析方法评估自然对流、热辐射和热传导有关参数对器件温度的影响，结果表明：对于特征长度为600 μm的典型器件，接触热导对散热影响最大，而自然对流和热辐射影响均低于2%；基于常压热平衡试验数据修正热模型后的仿真与试验数据吻合良好，最大温度偏差1.7 ℃；高热流微尺度器件接触热导为
16200 W/(m2·K)，预示真空下器件的最高温度为73.2 ℃，满足工程要求。研究结果可为卫星高热流微尺度器件热设计和验证提供参考。Abstract:There exist difficulties in thermal test verification of heat dissipation for high heat flux microscale devices in active phased array of satellites. In this article, firstly, the optimized thermal design scheme of low temperature co-fired ceramic (LTCC) in transmit/receive (T/R) module was proposed. The area ratio of thermal vias of 11.4% was selected, and the cross-scale thermal model with scale ratio of 800∶1 was established. Secondly, the ground thermal balance test was conducted, and an infrared thermal imager was used to measure the device temperature under atmospheric pressure. The influence of natural convection, heat radiation, and heat conduction on devices’ temperature was evaluated based on thermal parameter sensitivity analysis. The results indicate that the thermal contact conductance for typical devices with a feature length of 600 μm has the greatest impact on heat dissipation, while the natural convection and heat radiation have a total impact of less than 2%. The thermal simulation model modified based on the results of thermal balance test under atmospheric pressure highly agrees with the experimental data. The maximum temperature deviation is 1.7 ℃, and the thermal contact conductance of high heat flux microscale devices is
16200 W/(m2∙K). The predicted temperature of the device in vacuum is 73.2 ℃, which meets the engineering requirement. The proposed study may provide references for thermal design and verification of high heat flux microscale devices used in satellites.-
Keywords:
- high heat flux microscale devices /
- T/R module /
- thermal design /
- natural convection
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图 1 T/R模块器件和LTCC热通孔设计示意图
Figure 1. Design schematic for T/R module devices and LTCC with thermal vias
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图 7 微尺度器件温度分布仿真云图
Figure 7. Temperature distribution nephogram of the microscale device
表 1 微尺度器件热参数
Table 1 Thermal parameters of the microscale devices
器件编号 热耗/mW 尺寸/μm 热流密度/(W·cm-2) 1 45 600×1100×80 6.8 2 250 700×800×100 44.6 3 35 600×1100×80 5.3 4 50 600×1100×80 7.6 5 50 900×2200×50 5.1 
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表 2 自然对流换热系数理论计算值
Table 2 Theoretical values of natural convection heat transfer coefficients
表面 瑞利数Ra 努塞尔数Nu 自然对流换热系数h/
(W·m-2·K-1)器件1 0.024 0.629 90.13 器件2 0.025 0.630 93.96 器件3 0.022 0.624 89.50 器件4 0.025 0.632 90.55 器件5 0.191 0.792 57.34 LTCC 2 163.731 3.588 11.65
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表 3 器件温度对自然对流换热系数的敏感度分析
Table 3 Sensitivity analysis of device temperature to natural convection parameter
自然对流换热系数变化 器件2温度/℃ 器件4温度/℃ 标准情况 71.8 63.1 器件表面 增加30% 71.7 63.0 减小30% 71.9 63.2 LTCC表面 增加30% 71.7 62.9 减小30% 72.0 63.3
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表 4 器件温度对半球红外发射率（ε）的敏感度分析
Table 4 Sensitivity analysis of device temperature to hemispherical infrared emissivity (ε)
ε 器件2温度/℃ 器件4温度/℃ 标准情况 71.8 63.1 增加30% 71.7 63.0 减小30% 71.9 63.2
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表 5 器件温度对热传导参数的敏感度分析
Table 5 Sensitivity analysis of device temperature to thermal conductive parameters
热传导参数变化 器件2温度/℃ 器件4温度/℃ 标准情况 71.8 63.1 热导率 增加30% 71.8 63.1 减小30% 71.9 63.1 金属层
厚度增加30% 71.6 63.1 减小30% 72.1 63.1
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表 6 器件温度对接触热导的敏感度分析
Table 6 Sensitivity analysis of device temperature to thermal contact conductance
接触热导变化 器件2温度/℃ 器件4温度/℃ 标准情况 71.8 63.1 器件与LTCC
基板间减小30% 76.1 64.1 增加30% 69.5 62.5 LTCC基板与
钼铜底板间减小30% 71.8 63.1 增加30% 71.8 63.1 钼铜底板与
试验台间减小30% 71.9 63.1 增加30% 71.8 63.1
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表 7 热模型修正后器件温度仿真结果与试验结果对比
Table 7 Comparison of device temperatures between simulation results and experimentel results after modification of thermal model
单位：℃ 器件
编号试验台
温度器件试验
温度常压仿真
温度真空预示
温度2 60 71.8 72.9 73.2 55 68.8 68.0 68.2 4 60 64.4 63.4 63.6 55 61.2 59.5 59.7
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