Abstract: Fin field-effect transistor (FinFET) devices have become an important choice for future space applications due to their high integration and high computational density. The radiation sensitivity of FinFET devices is closely related to their fabrication processes and operating conditions. To understand the single event upset (SEU) sensitivity mechanism of FinFET devices, a number of relevant researches conducted both domestically and abroad were reviewed in this article. Based on the SEU machanism, the influence of different operating conditions such as the feature size of FinFET devices, the power supply voltage, and the linear energy transfer (LET) values of incident particles on the SEU susceptibility of FinFETs were analyzed. Finally, an outlook on the research direction for SEUs of FinFET devices based on practical applications was provided.