Abstract: The heterostructure material based on gallium nitride (GaN) has become a research hotspot in the field of semiconductor materials for aerospace applications, owing to its advantages of wide band gap, high temperature resistance, high breakdown voltage, and excellent radiation resistance, In particular, the AlGaN/GaN high electron mobility transistor (HEMT) based on the GaN material is severely challenged for its performance against the space radiation, due to defects and damage resulted in the preparation process . This paper firstly analyzes the space radiation mechanism and the radiation effects on the AlGaN/GaN HEMT. Then, recognizing that the LEO and MEO irradiation environments mainly consist of protons, the effects of the proton irradiation of different energies and fluences on the AlGaN/GaN HEMT are discussed. In view of the lack of piezoelectric polarization perspective for analyzing the proton irradiation effect on the AlGaN/GaN HEMT, and the fact that the space protons of different energies and fluences have different effects, some suggestions for next research focuses are put forward.