Abstract: With the wide bandgap semiconductor power devices used in the spacecraft under the action of the space charged particles, a single event burnout (SEB) might happen. In order to study the mechanism of the single event burnout and the related protection measures, a simulation of the SEB of the SiC MOSFET device is carried out by using the TCAD, and it is found that the device has a SEB threshold voltage of 500 V for the particle incidence in the most sensitive location. At the same time, the microscopic electrical parameter distribution characteristics of the device are obtained through simulation. The mechanism of the SEB in the device can be explained in this way that the positive feedback effect of the parasitic transistor causes the electric field strength (5.4 MV/cm and 4.2 MV/cm) in the buffer layer and the base region to exceed the breakdown field intensity (3 MV/cm) of the SiC material. Based on the simulation, a protection plan is proposed for the area of the device that is vulnerable to the SEB, which, proved by a follow-up simulation, can increase the SEB threshold voltage of the device from 500 V to near 550 V. The above simulation results may provide a technical support for the SEB resistance design of such kind of devices.