SRAM型FPGA单粒子效应测试方法及试验验证

Testing methods and experimental verification for single event effects of SRAM-based FPGA

  • 摘要: 针对空间用SRAM型FPGA器件抗单粒子效应性能全面测试评估的要求,研究内部不同资源电路结构的单粒子效应敏感性及测试方法,利用重离子加速器开展抗辐射加固SRAM型FPGA单粒子效应模拟辐照试验,对配置存储器、块存储器、触发器等敏感单元的单粒子翻转、单粒子功能中断、单粒子锁定特性进行研究。试验结果表明,所提出测试方法能有效地覆盖测试SRAM型FPGA单粒子效应敏感资源,所测试抗辐射加固SRAM型FPGA器件具有良好的抗单粒子锁定性能,但对单粒子翻转和单粒子功能中断非常敏感,静态测试模式下对单粒子翻转更为敏感。有关测试方法和结果可以为SRAM型FPGA的单粒子效应评估及防护提供参考。

     

    Abstract: The single event effects of space-used SRAM-based FPGA are especially studied by using the heavy ion accelerator for a comprehensive SEE susceptibility assessment. The SEE sensitivity and the testing methods of different circuit resources are analyzed, as well as the characterizations of SEU, SEFI and SEL of various sensitive modules (CRAM, BRAM and Flip-flops). The results demonstrate the application ranges and the effectiveness of the testing methods in the SRAM FPGA SEE sensitivity assessment. The radiation-hardened FPGA exhibits the expected SEL resistance and the sensitivity to the SEU and the SEFI, and for the SEU, the FPGA performs worse in the static testing. The related testing methods and results may provide some guidance for the SEE test and the radiation design of similar devices.

     

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