Abstract: With the decrease of the feature size of the electronic devices, the upset threshold also decreases, thus, the high-energy electrons in the space may induce the single event upset in nanodevices. In this paper, a 28 nm V7 FPGA is selected as the test object, to be irradiated by electrons with the energies of 0.2 MeV and 1.5 MeV and the injection rate of 5×10⁸ - 1×10⁹/(cm²·s), respectively. It is shown that the specimen is significantly affected by the upset under the action of the high-energy electrons. In view of the simulation results of the high-energy electrons acting on the 28 nm devices, it can be deduced that a single electron with 1.5 MeV energy cannot cause a nuclear reaction by colliding with the device, to induce a single event upset by itself. The upset effect is probably induced by multiple electrons acting simultaneously on a single tube resulting in an accumulation of the electric charge. Therefore, for the environment on the radiation belt of Jupiter and other stars with high energy and high flux electrons, it is necessary to consider the impact of high-energy electron induced nanodevice upsets on the spacecraft.