Abstract:
This paper studies the single event effects (SEE) induced by protons in 40 nm and 65 nm CMOS SRAM to develop a test method for the SEE induced by space protons. The samples are irradiated and the single event upsets induced by the direct ionization of the low energy protons, the high energy proton nuclear reaction products, and the heavy ions are measured. The curves of the cross sections versus the incident proton energy and the heavy ion LET are obtained. The single event effect test method is proposed as follows. 1) To evaluate the single event effects induced by the direct ionization of the low-energy protons, based on the linear energy transfer (LET) equivalent theory, the heavy ion test is carried out. 2) High-energy proton test is performed to evaluate the single event effect induced by the indirect ionization of the high energy protons. 3) The on-orbit single event upset rates are predicted according to the ground-based experimental data of the proton and heavy-ion single event effects, combined with a space radiation environmental model.
下载: