磁阻式随机存储器(MRAM)重离子单粒子效应试验研究

Experimental study of single event effect of heavy ions on magneto-resistive random access memory (MRAM) in space applications

  • 摘要: 磁阻式随机存储器(MRAM)作为非电荷存储的非易失存储器在抗辐射性能上有一定的优势,在空间有较好的应用前景。文章分析了MRAM的工作原理,选取典型的MR0A08BCYS35型MRAM存储器为研究对象,进行了重离子单粒子效应敏感性试验研究,在此基础上,利用专用软件Fore CAST计算预估了该种器件空间应用条件下的单粒子在轨翻转率,给出了在轨应用的具体建议。

     

    Abstract: Without any charge storage, the Magneto-resistive Random Access Memory (MRAM), as a nonvolatile memory, enjoys a natural advantage of its capability against the space radiation. The working principle and the radiation-hardening mechanism of MARM are analyzed in this paper by taking the type MR0A08BCYS35 as an example, and the heavy ion SEE test is carried out on this kind of MRAM. Based on the test result, the SEU rate of this kind of MRAM under the GEO radiation condition is calculated by the self-developed software Fore CAST®. Suggestions are then made for the corresponding space applications.

     

/

返回文章
返回