一款新研制ASIC器件的单粒子效应检测与故障定位

Single event effect detection and fault location for an ASIC device

  • 摘要: 针对一款国产新研ASIC器件抗单粒子能力评估的需要,研制了ASIC器件单粒子效应检测系统。通过单粒子效应评估试验,得到了该器件在Kr离子辐照下的单粒子翻转数据。采用故障树分析和电路仿真技术,对ASIC器件内部单粒子翻转敏感模块进行定位。研究成果可为器件厂家后续设计改进和卫星型号系统级抗辐射加固设计提供依据。

     

    Abstract: The single event effect (SEE) test system is developed for the SEE evaluation for a domestic ASIC (application specific integrated circuit) used on the space satellite. The single event upset (SEU) data under irradiation of the Kr ion are obtained for the SEE evaluation test. The fault tree analysis and circuit emulation technique is adopted in the simulation for the SEU, and the SEU sensitive module is located inside the ASIC, which provides a basis for the system-level radiation hardening design of satellites and the follow-up design for the IC designer.

     

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