CMOS SRAM器件单粒子锁定敏感区的脉冲激光定位试验研究

Research of SEL sensitive region of CMOS SRAM by pulsed laser mapping facility

摘要: 利用脉冲激光定位成像系统，对CMOS SRAM K6R4016V1D器件开展了单粒子锁定效应（SEL）敏感区定位的试验研究。试验结果表明：该器件的单粒子锁定效应敏感区呈周期性分布，而对于单一的SEL敏感区，其长度和宽度相差很大。在此基础上进一步讨论了SEL敏感区的分布对测试方法和空间SEL发生频次计算的影响。

Abstract: The pulsed laser mapping facility is used to study the single event latch-up sensitive regions of the CMOS SRAM K6R4016V1D. Experiment results show that the SEL sensitivity mappings of the device have similar repetitive patterns and the individual SEL sensitive region is of high aspect ratio. The impacts of the SEL sensitivity mappings on the SEL ground test methods and the SEL rate prediction are also discussed.