Abstract: The working principles of the pulsed laser simulation to study the SEL (single event latch-up) effects are discussed in this paper. With the TDC-GP1 chip as an example, the pulsed laser simulation tests for the SEL are carried out on the SEL simulation test facility, including the SEL simulation tests with and without the current-limiting resistance. It is shown that the SEL occurs while the TDC-GP1 is irradiated by a 20 nJ pulsed laser. In the contrast tests, it is found that the SEL simulation test with the current-limiting resistance not only reduces the SEL current and voltage, but also effectively protects the TDC-GP1 chip from damages.